Temperature and Bias Voltage Dependence of Ferromagnetic Tunneling Junctions.
نویسندگان
چکیده
منابع مشابه
Bias Voltage and Temperature Dependence of Hot Electron Magnetotransport
We present a qualitative model study of energy and temperature dependence of hot electron magnetotransport. This model calculations are based on a simple argument that the inelastic scattering strength of hot electrons is strongly spin and energy dependent in the ferromagnets. Since there is no clear experimental data to compare with this model calculations, we are not able to extract clear phy...
متن کاملMagnetic tunnel junctions with high magnetoresistance and small bias voltage dependence using epitaxial NiFe„111... ferromagnetic bottom electrodes
Magnetic tunnel junctions ~MTJs! were fabricated using an Al–O insulating layer prepared on an epitaxially grown Ni80Fe20 bottom electrode and on a polycrystalline Ni80Fe20 bottom electrode. Crystallographic orientations and surface morphology of the films were examined using x-ray diffraction and atomic force microscopy, respectively. The MTJ with an epitaxial bottom electrode showed a tunnel ...
متن کاملBias voltage dependence of tunneling anisotropic magnetoresistance in magnetic tunnel junctions with MgO and Al2O3 tunnel barriers.
Tunneling anisotropic magnetoresistance (TAMR) is observed in tunnel junctions with transition metal electrodes as the moments are rotated from in-plane to out-of-plane in sufficiently large magnetic fields that the moments are nearly parallel to one another. A complex angular dependence of the tunneling resistance is found with twofold and fourfold components that vary strongly with bias volta...
متن کاملOn the temperature and voltage dependence of short-term negative bias temperature stress
Article history: Received 19 June 2009 Available online 7 August 2009 0026-2714/$ see front matter 2009 Elsevier Ltd. A doi:10.1016/j.microrel.2009.06.040 * Corresponding author. Tel.: +43 1 58801/36050; f E-mail address: [email protected] (Ph Initial NBTI degradation is often explained by elastic hole trapping which also considerably distorts longterm measurements. In order to clari...
متن کاملTunneling magnetoresistance dependence on the temperature in a ferromagnetic Zener diode
In the present work we focus on the study of the temperature dependence of the tunnelling current in a ferromagnetic Zener diode. We predict the tunneling magnetoresistance dependence on the temperature. Large doping concentrations lead to magnetic semiconductors with Curie temperature TC near or over room temperature and this will facilitate the introduction of new devices that make use of the...
متن کاملذخیره در منابع من
با ذخیره ی این منبع در منابع من، دسترسی به آن را برای استفاده های بعدی آسان تر کنید
ژورنال
عنوان ژورنال: Journal of the Magnetics Society of Japan
سال: 1999
ISSN: 0285-0192
DOI: 10.3379/jmsjmag.23.1301